Part detail
Microcircuit Memory
1816-0346NSN5962-01-064-5759CAGE18324
Microcircuit Memory
Detailed description
1816-0346 procurement notes
Microcircuit Memory
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 1816-0346 with NSN 5962-01-064-5759, 5962010645759
Characteristics Data of NSN 5962-01-064-5759, 5962010645759
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 650.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND W/ENABLE AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |